TIG111BF no.9017-1/5 features ? low-saturation voltage ? ultrahigh speed switching ? enhansment type speci cations absolute maximum ratings at ta=25c, unless otherwise speci ed parameter symbol conditions ratings unit collector-to-emitter voltage v ces 600 v gate-to-emitter voltage v ges 30 v collector current (dc) i cc *1 limited by tjmax 23 a i c *2 limited by tjmax @tc=25 c *3 11 a @tc=100 c *3 5a collector current (pulse) i cp pulse width limited by tjmax 92 a allowable power dissipation p d 2w tc=25 c (sanyo?s ideal heat dissipation condition)*3 25 w junction temperature tj 150 c storage temperature tstg -55 to +150 c note : * 1 shows chip capability * 2 collector current is calculated from the following for mula * 3 sanyo?s condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. package dimensions unit : mm (typ) 7509-005 ordering number : en9017a 91411 tkim tc-00002644/61511qj tkim tc-00002613 sanyo semiconductors data sheet TIG111BF n-channel non punch through igbt high power high speed switching applications http:// semicon.sanyo.com/en/network product & package information ? package : to-220fi(ls) ? jeita, jedec : sc-67, sot-186a, to-220f ? minimum packing quantity : 100 pcs./bag, 50 pcs./magazine marking electrical connection tig111 lot no. 2 1 3 16.0 14.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : gate 2 : collector 3 : emitter sanyo : to-220fi(ls) tjmax - t c i c (t c )= r th (j-c) v ce (sat)max.(tjmax, i c (t c ))
TIG111BF no.9017-2/5 electrical characteristics at tj=25c, unless otherwise speci ed parameter symbol conditions ratings unit min typ max collector-to-emitter breakdown voltage v (br)ces i c =1ma, v ge =0v 600 v collector-to-emitter cutoff current i ces v ce =600v, v ge =0v tj=25 c 100 a tj=125 c1ma gate-to-emitter leakage current i ges v ge =30v, v ce =0v 100 na gate-to-emitter threshold voltage v ge (off) v ce =10v, i c =1ma 4.0 5.0 6.0 v collector-to-emitter saturation voltage v ce (sat)1 v ge =15v, i c =10a tj=25 c 1.6 2.0 v tj=125 c 1.7 v v ce (sat)2 v ge =15v, i c =25a tj=25 c 2.2 v input capacitance cies v ce =30v, f=1mhz 1880 pf output capacitance coes 30 pf reverse transfer capacitance cres 22 pf turn-on delay time t d (on) l=200 h, v ge =15v, i c =10a, v cc =300v, r g =30 , see speci ed test circuit. 43 ns rise time t r 25 ns turn-on time t on 250 ns turn-off delay time t d (off) 175 ns fall time t f 115 ns turn-off time t off 360 ns total gate charge qg v ce =300v, v ge =15v, i c =10a 63 nc gate-to-source charge qgs 12 nc gate-to-drain ?miller? charge qgd 22 nc thermal characteristics at ta=25c, unless otherwise speci ed parameter symbol conditions ratings unit min typ max thermal resistance (junction- case) rth(j-c) tc=25 c (sanyo?s ideal heat dissipation condition)*3 5 c / w thermal resistance (junction- at mosphere) rth(j-a) 62.5 c / w switching time test circuit timing chart 90% 0 90% 0 10% 10% v ge v ce i c 10% 10% 90% 10% t off t d (off) t f t r t d (on) t on it16383 diode r g v cc TIG111BF 15v 0v v ge v clamp =600v l
TIG111BF no.9017-3/5 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ge (off) gate-to-emitter threshold voltage, v ge (off) -- v collector current, i c -- a i c -- v ce gate-to-emitter threshold voltage, v ge (off) -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v t off , t d (off), t f -- r g switching time, t off , t d (off), t f -- ns gate resistance, r g -- it16401 0 0 50 40 30 20 10 it16404 3 0 2.0 3.0 1.0 1.5 0.5 2.5 3.5 4.0 30 20 10 40 50 45 10 89 67 v ge =18v 15v 10v v ce =10v 8v 25 c 125 c tj= --40 c tj= --40 c t j=125 c --40 c 25 c 12v it16402 0 0 50 40 30 20 10 2.0 3.0 1.5 0.5 1.0 2.5 3.5 4.0 v ge =18v 15v 10v 8v tj=25 c it16403 0 0 50 40 30 20 10 2.0 3.0 1.5 1.0 0.5 2.5 3.5 4.0 v ge =18v 15v 10v 8v tj=125 c 12v 4 3 0 1 2 it16405 5 5 7 9 11 13 15 23a 10a tj= --40 c i c =46a 4 3 0 1 2 it16407 5 5 7 9 11 13 15 23a 10a tj=125 c i c =46a 4 3 0 1 2 it16406 5 5 7 9 11 13 15 23a 10a tj=25 c i c =46a 2 3 57 2 3 57 57 3 2 100 1000 1.0 10 it16408 7 5 3 2 100 7 5 3 2 7 5 3 2 1000 10000 10 t d (off) v cc =300v vclamp=600v l=200 h v ge =15v i c =10a t f t off 12v
TIG111BF no.9017-4/5 collector-to-emitter voltage, v ce -- v cies, coes, cres -- pf cies, coes, cres -- v ce t off , t d (off), t f -- i c switching time, t off , t d (off), t f -- ns collector current, i c -- a t on , t d (on), t r -- r g switching time, t on , t d (on), t r -- ns gate resistance, r g -- t on , t d (on), t r -- i c switching time, t on , t d (on), t r -- ns collector current, i c -- a total gate charge, qg -- nc v ge -- qg gate-to-emitter voltage, v ge -- v p d -- tc case temperature, tc -- c allowable power dissipation, p d -- w i c -- tc case temperature, tc -- c collector current, i c (dc) -- a collector current, i c -- a collector-to-emitter voltage, v ce -- v forward bias a s o it16410 02530 51520 10 100 7 5 3 10000 1000 7 5 3 2 10 1.0 7 5 3 2 2 7 5 3 2 it16412 cies coes cres f=1mhz 23 57 57 3 2 100 1.0 10 it16409 3 2 7 5 1000 100 t d (off) v cc =300v vclamp=600v l=200 h v ge =15v r g =30 t f t off 23 57 57 3 2 100 1.0 10 it16411 3 2 7 5 3 2 7 5 1000 10 100 t d (on) v cc =300v vclamp=600v l=200 h v ge =15v r g =30 t r t on 2 3 57 2 3 57 57 3 2 100 1000 1.0 10 7 5 3 2 100 7 5 3 2 1000 10 t d (on) v cc =300v vclamp=600v l=200 h v ge =15v i c =10a t r t on 070 60 40 20 50 30 10 0 3 6 9 15 12 it16413 v cc =300v i c =10a v ge =15v it16592 0 0 20 40 60 80 100 120 20 25 15 10 5 30 160 140 it16593 0 0 25 50 75 100 150 125 10 11 5 15 200 175 7 5 3 2 1.0 7 5 3 2 0.1 10 7 5 3 2 100 7 5 3 2 1000 7 2 5 3 0.01 1.0 10 25 37 5 72 100 1000 5 37 23 10ms 1ms dc operation it16594 p t =500 s 100ms tc=25 c single pulse
TIG111BF no.9017-5/5 ps this catalog provides information as of september, 2011. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. collector current, i c -- a collector-to-emitter voltage, v ce -- v reverse bias a s o 10 7 5 3 2 100 7 5 3 2 1000 7 2 5 3 1.0 1.0 10 25 37 5 72 100 1000 5 37 23 it16417 tc=25 c v cc =300v l=500 h v ge =15v
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